Characterization of undoped high resistivity CdTe grown by a THM method
نویسندگان
چکیده
2014 Using time of flight technique, it is shown that the level at Ev + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity. REVUE DE PHYSIQUE APPLIQUÉE TOME 12, FÉVRIER 1977, PAGE
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